MTE652T2

Transcend’s MTE652T2 M.2 SSD features the PCI Express (PCIe) Gen 3 x4 interface and is compatible with NVM Express (NVMe) 1.3 specifications, delivering unparalleled transfer speeds. The MTE652T2 features the latest 3D NAND technology for improved storage efficiency, 30µ” PCB gold finger and Corner Bond technology for enhanced durability, built in DRAM cache for fast access, an extended operating temperature range from -20°C to 75°C, and an endurance rating of 3K Program/Erase cycles for reliable operation.

96 layer 3D NAND Flash

30µ” PCB gold finger

Corner Bond

Extended Temperature

Dynamic Thermal Throttling

Read Disturbance

Garbage Collection

Wear Leveling

TRIM

Bad Block Administration

Power Shield

Early Move

Specifications

Firmware Features

  • Supports NVM commands
  • Dynamic thermal throttling
  • Built in LDPC ECC (Error Correction Code) functionality
  • Advanced Global Wear Leveling and Block management for reliability
  • Advanced Garbage Collection
  • Full drive encryption with Advanced Encryption Standard (AES) (optional)

Hardware features

  • Compliant with RoHS standards
  • Compliant with NVM Express 1.3 specifications
  • Compliant with PCI Express 3.1 specifications
  • Space saving M.2 form factor (80 mm) – ideal for mobile computing devices
  • PCIe Gen 3 x 4 interface
  • DDR3 DRAM Cache embedded
  • 3K P/E cycles (Program/Erase cycles) guaranteed
  • Key components fortified by default with Corner Bond technology
  • 30µ” PCB gold finger
  • Power Shield (PS) to ensure data transfer integrity and minimize data corruption in the drive during an abnormal power outage
  • Promised operational reliability in an extended temperature range (from -20°C to 75°C)

SPECIFICATIONS

APPEARANCE
Dimensions 80 mm x 22 mm x 3.58 mm (3.15″ x 0.87″ x 0.14″)
Weight 9 g (0.32 oz)
Form Factor
  • M.2
M.2 Type
  • 2280-D2-M (Double sided)

Interface
 Bus Interface
  • NVMe PCIe de Gen3 x4

Storage
Flash Type
  • Flash 3D NAND
Capacity
  • 64 GB/
  • 128 GB/
  • 256 GB/
  • 512 GB

Operating Enviroment
Operating Voltage
  • 3.3V±5%
Operating Temperature
  • Extended -20°C (-4°F) ~ 75°C (167°F)
Storage Temperature -55°C (-67°F) ~ 85°C (185°F)
Hummidity 5% ~ 95%
Shock
  • 1500 G, 0.5 ms, 3 axis
Vibration (IDLE) 20 G (Peak to Peak), 7 Hz ~ 2000 Hz (frequency)

Power
Power Consumption (operating) 3.3 watt(s)
Power Consumption (IDLE) 0.6 watt(s)

Performance
Sequential Read / Write (CrystalDiskMark) Read: Up to 2,100 MB/s
Write: Up to 1,250 MB/s
4K Radom Read / Write

(IOmeter)

 Read: Up to 190,000 IOPS
Write: Up to 290,000 IOPS
Mean time between fails (MTBF) 3,000,000 hour(s)
Terabytes written (TBW) Up to 1,080 TBW
Drive writer per day (DWPD) 2 (3 years)
Note
  • Speed may vary due to host hardware, software, usage, and storage capacity.
  • The workload used to rate DWPD may be different from your actual workload, which may vary due to host hardware, software, usage, and storage capacity.
  • Terabytes Written (TBW) expresses the endurance under the highest capacity.

Learn more

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