MTE670T
Transcend’s MTE670T M.2 SSD features the PCI Express (PCIe) Gen 3 x4 interface and is compatible with NVM Express (NVMe) 1.3 specifications to achieve never before seen transfer speeds. The MTE670T features state of the art 3D NAND technology, which allows 112 layers of 3D NAND flash chips to be vertically stacked. Compared to 3D NAND at 96 layers, this density breakthrough greatly improves storage efficiency. Applied with the 30µ” gold finger PCB and Corner Bond technology, the MTE670T is fully tested in house to guarantee reliability in mission critical applications, boasting an endurance rating of 3K Program/Erase cycles and an extended operating temperature ranging from -20℃~75℃ (-4ºF ~ 167ºF).
Firmware Features
- Supports NVM commands
- SLC caching technology
- Dynamic thermal throttling
- Built in LDPC ECC (Error Correction Code) functionality
- Advanced Global Wear Leveling and Block management for reliability
- Advanced Garbage Collection
- S.M.A.R.T. function for enhanced endurance
- TRIM command for better performance
Hardware Features
- Compliant with RoHS standards
- Compliant with NVM Express 1.3 specifications
- Compliant with PCI Express 3.1 specifications
- Space saving M.2 form factor (80 mm) – ideal for mobile computing devices
- PCIe Gen 3 x 4 interface
- Endurance: 3K P/E cycles (Program/Erase cycles) guaranteed
- Key components fortified by default with Corner Bond technology
- 30µ” PCB gold finger
- Power Shield (PS) to ensure data transfer integrity and minimize data corruption in the drive during an abnormal power outage
- Extended Temp. (-20°C ~ 75°C) and Wide Temp. (-40°C ~ 85°C) options available
- Supports Transcend Scope Pro software
Specifications
Appearence |
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Dimensions | 80 mm x 22 mm x 2.23 mm (3.15″ x 0.87″ x 0.08″) |
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Weight | 9 g (0.32 oz) |
Form Factor |
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M.2 type |
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Interface |
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Bus Interface |
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Storage |
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Flash Type |
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Capacity |
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Operating Enviroment |
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Operating Voltage |
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Operating Temperature |
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Storage Temperature | -40°C (-40°F) ~ 85°C (185°F) |
Humidity | 5% ~ 95% |
Shcok |
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Vibration (Operating) | 20 G (peak to peak), 7 Hz ~ 2,000 Hz (frequency) |
Power |
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Power Consumption (Operating) | 3.1 watt(s) |
Power Cosumption (IDLE) | 0.4 watt(s) |
Performance |
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Sequential read /write
(CrystalDiskMark) |
Read: Up to 2,100 MB/s Write: Up to 1,600 MB/s |
4K Random Read/Write (IOmeter) | Read: Up to 150,000 IOPS Write: Up to 280,000 IOPS |
Mean Time between fails (MTBF) | 3,000,000 hour(s) |
Terabytes Written (TBW) | Up to 960 TBW |
Drive write per day (DWPD) | 0.88 (3 years) |
Note |
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