Transcend’s MTE670T M.2 SSD features the PCI Express (PCIe) Gen 3 x4 interface and is compatible with NVM Express (NVMe) 1.3 specifications to achieve never before seen transfer speeds. The MTE670T features state of the art 3D NAND technology, which allows 112 layers of 3D NAND flash chips to be vertically stacked. Compared to 3D NAND at 96 layers, this density breakthrough greatly improves storage efficiency. Applied with the 30µ” gold finger PCB and Corner Bond technology, the MTE670T is fully tested in house to guarantee reliability in mission critical applications, boasting an endurance rating of 3K Program/Erase cycles and an extended operating temperature ranging from -20℃~75℃ (-4ºF ~ 167ºF).

112 layer 3D NAND Flash

30µ” PCB gold finger

Corner Bond

Extended Temperature

Dynamic Thermal Throttling

Read Disturbance

Garbage Collection

Wear Leveling


Bad Block Administration

Read Disturbance

Power Shield (PS)

Firmware Features

  • Supports NVM commands
  • SLC caching technology
  • Dynamic thermal throttling
  • Built in LDPC ECC (Error Correction Code) functionality
  • Advanced Global Wear Leveling and Block management for reliability
  • Advanced Garbage Collection
  • S.M.A.R.T. function for enhanced endurance
  • TRIM command for better performance

Hardware Features

  • Compliant with RoHS standards
  • Compliant with NVM Express 1.3 specifications
  • Compliant with PCI Express 3.1 specifications
  • Space saving M.2 form factor (80 mm) – ideal for mobile computing devices
  • PCIe Gen 3 x 4 interface
  • Endurance: 3K P/E cycles (Program/Erase cycles) guaranteed
  • Key components fortified by default with Corner Bond technology
  • 30µ” PCB gold finger
  • Power Shield (PS) to ensure data transfer integrity and minimize data corruption in the drive during an abnormal power outage
  • Extended Temp. (-20°C ~ 75°C) and Wide Temp. (-40°C ~ 85°C) options available
  • Supports Transcend Scope Pro software



Dimensions 80 mm x 22 mm x 2.23 mm (3.15″ x 0.87″ x 0.08″)
Weight 9 g (0.32 oz)
Form Factor
  • M.2
 M.2 type
  • 2280-S2-M (Single sided)


Bus Interface
  • NVMe PCIe de Gen3 x4


Flash Type
  • 112-layer 3D NAND flash
  • 128 GB/
  • 256 GB/
  • 512 GB/
  • 1 TB

Operating Enviroment

Operating Voltage
  • 3.3V±5%
Operating Temperature
  • Extended

    -20°C (-4°F) ~ 75°C (167°F)

  • Wide temperature

    -40°C (-40°F) ~ 85°C (185°F)

Storage Temperature -40°C (-40°F) ~ 85°C (185°F)
Humidity 5% ~ 95%
  • 1500 G, 0.5 ms, 3 ejes
Vibration (Operating) 20 G (peak to peak), 7 Hz ~ 2,000 Hz (frequency)


Power Consumption (Operating) 3.1 watt(s)
Power Cosumption (IDLE) 0.4 watt(s)


Sequential read  /write


Read: Up to 2,100 MB/s
Write: Up to 1,600 MB/s
 4K Random Read/Write (IOmeter) Read: Up to 150,000 IOPS
Write: Up to 280,000 IOPS
Mean Time between fails (MTBF) 3,000,000 hour(s)
Terabytes Written (TBW) Up to 960 TBW
Drive write per day (DWPD) 0.88 (3 years)
  • Speed may vary due to host hardware, software, usage, and storage capacity.
  • The workload used to rate DWPD may be different from your actual workload, which may vary due to host hardware, software, usage, and storage capacity.
  • Terabytes Written (TBW) expresses the endurance under the highest capacity.
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