MTE710T

Transcend’s M.2 SSD MTE710T features the PCI Express (PCIe) Gen 4 x4 interface and is compatible with NVM Express (NVMe) 1.4 specifications to achieve never before seen transfer speeds. The MTE710T features state of the art 3D NAND technology, which allows 112 layers of 3D NAND flash chips to be vertically stacked. Compared to 3D NAND at 96 layers, this density breakthrough greatly improves storage efficiency, and its built in DRAM cache allows faster access. Applied with 30µ” gold finger PCB and Corner Bond technology, the MTE710T is fully tested in house to guarantee reliability in mission critical applications, boasting an endurance rating of 3K Program/Erase cycles and an extended operating temperature ranging from -20℃~75℃.

112 layer 3D NAND Flash

30µ” PCB gold finger

Corner Bond

Extended Temperature

Dynamic Thermal Throttling

Read Disturbance

Garbage Collection

Wear Leveling

TRIM

Bad Block Administration

Early Move

FIRMWARE FEATURES

  • Supports NVM commands
  • SLC caching technology
  • Dynamic thermal throttling
  • Built in LDPC ECC (Error Correction Code) functionality
  • Advanced Global Wear Leveling and Block management for reliability
  • Advanced Garbage Collection
  • S.M.A.R.T. function for enhanced endurance
  • TRIM command for better performance
  • Full drive encryption with Advanced Encryption Standard (AES) (optional)

HARDWARE FEATURES

  • Compliant with RoHS standards
  • Compliant with PCI Express 3.1 specifications
  • Compliant with NVM Express 1.4 specifications
  • Space saving M.2 form factor (80 mm) – ideal for mobile computing devices
  • PCIe Gen 4 x 4 interface
  • DDR4 DRAM Cache embedded
  • Endurance: 3K P/E cycles (Program/Erase cycles) guaranteed
  • Key components fortified by default with Corner Bond technology
  • 30µ” PCB gold finger
  • Promised operational reliability in an extended temperature range (from -20°C to 75°C)
  • Supports Transcend Scope Pro software

SPECIFICATIONS

APPEARANCE

DIMENSIONS 80 mm x 22 mm x 3.58 mm (3.15″ x 0.87″ x 0.14″)
WEIGHT 10 g (0.35 oz)
FORM FACTOR M.2
M.2 TYPE 2280-D2-M (Double sided)

INTERFACE

BUS INTERFACE NVMe PCIe Gen4 x4

STORAGE

FLASH TYPE 3D NAND flash
CAPACITY 256 GB/

512 GB/

1 TB/

2 TB

OPERATING ENVIRONMENT

OPERATING VOLTAGE 3.3V±5%
OPERATING TEMPERATURE
Extended

-20°C (-4°F) ~ 75°C (167°F)

STORAGE TEMPERATURE -55°C (-67°F) ~ 85°C (185°F)
HUMIDITY 5% ~ 95%
SHOCK 1500 G, 0.5 ms, 3 axis
VIBRATION (OPERATING) 20 G (peak to peak), 7 Hz ~ 2,000 Hz (frequency)

POWER

POWER CONSUMPTION (OPERATING) 4.9 watt(s)
POWER CONSUMPTION (IDLE) 1.52 watt(s)

PERFORMANCE

SEQUENTIAL READ/WRITE (CRYSTALDISKMARK) Read: Up to 3,800 MB/s
Write: Up to 3,200 MB/s
4K RANDOM READ/WRITE (IOMETER) Read: Up to 500,000 IOPS
Write: Up to 560,000 IOPS
MEAN TIME BETWEEN FAILS (MTBF) 5,500,000 hour(s)
TERABYTES WRITTEN (TBW) Up to 1,700 TBW
DRIVE WRITER PER DAY (DWPD) 1.55 (3 years)
NOTE Speed may vary due to host hardware, software, usage, and storage capacity.

The workload used to rate DWPD may be different from your actual workload, which may vary due to host hardware, software, usage, and storage capacity.

Terabytes Written (TBW) expresses the endurance under the highest capacity.

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